Datasheet > IRF7452QPBF_10

IRF7452QPBF_10

更新时间： 2024-11-14 11:57:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	189K
描述
HEXFETPower MOSFET

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IRF7452QPBF_10 数据手册

PD - 96113A

IRF7452QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

NChannelMOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Lead-Free

V_DSS

100V

R_DS(on)max

I_D

4.5A

0.060Ω

Description

These HEXFET^®Power MOSFET's in SO-8

packageutilizethelastestprocessingtechniques

toachieveextremelylow on-resistanceper silicon

area. AdditionalfeaturesoftheseHEXFETPower

MOSFET's are a 150°C junction operating

temperature, fast switchingspeedandimproved

repetitiveavalancherating.Thesebenefitscombine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

SO-8

Top View

The efficient SO-8 package provides enhanced

thermalcharacteristicsmakingitidealinavariety

of power applications. This surface mount SO-8

can dramatically reduce board space and is also

available in Tape & Reel.

Absolute Maximum Ratings

Parameter

Max.

4.5

3.6

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

3.5

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topologies

l Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input

with Passive Reset Forward Converter Primary

Notes through are on page 8

www.irf.com

08/09/10

12 3 4 5 6 7 8

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