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IRF7424TR PDF预览

IRF7424TR

更新时间: 2024-11-19 12:47:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 235K
描述
Ultra Low On-Resistance

IRF7424TR 数据手册

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PD- 94024A  
IRF7424  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Surface Mount  
VDSS  
-30V  
RDS(on) max (mΩ)  
13.5@VGS = -10V  
22@VGS = -4.5V  
ID  
-11A  
-8.8A  
l Available in Tape & Reel  
A
1
2
8
D
S
S
Description  
These P-Channel MOSFETs from International  
Rectifier utilize advanced processing techniques to  
achieve the extremely low on-resistance per silicon  
area. This benefit provides the designer with an  
extremely efficient device for use in battery and load  
management applications..  
7
D
3
4
6
S
D
5
G
D
SO-8  
Top View  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infrared, or wave soldering techniques.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-30  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-11  
-9.3  
A
-47  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
2.5  
W
1.6  
Linear Derating Factor  
20  
mW/°C  
VGS  
Gate-to-Source Voltage  
± 20  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
3/29/01  

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