5秒后页面跳转
IRF7425PBF-1 PDF预览

IRF7425PBF-1

更新时间: 2024-02-29 06:17:18
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 182K
描述
Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

IRF7425PBF-1 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):15 A最大漏源导通电阻:0.0082 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):60 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IRF7425PBF-1 数据手册

 浏览型号IRF7425PBF-1的Datasheet PDF文件第2页浏览型号IRF7425PBF-1的Datasheet PDF文件第3页浏览型号IRF7425PBF-1的Datasheet PDF文件第4页浏览型号IRF7425PBF-1的Datasheet PDF文件第5页浏览型号IRF7425PBF-1的Datasheet PDF文件第6页浏览型号IRF7425PBF-1的Datasheet PDF文件第7页 
IRF7425PbF-1  
HEXFET® Power MOSFET  
VDS  
-20  
8.2  
V
A
1
2
3
4
8
D
S
S
RDS(on) max  
(@VGS = -4.5V)  
RDS(on) max  
(@VGS = -2.5V)  
Qg (typical)  
ID  
7
D
m
Ω
6
S
G
D
13  
87  
5
D
nC  
A
SO-8  
Top View  
-15  
(@TA = 25°C)  
Features  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Benefits  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
Tube/Bulk  
Tape and Reel  
95  
4000  
IRF7425PbF-1  
IRF7425TRPbF-1  
IRF7425PbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
Max.  
-20  
-15  
-12  
-60  
2.5  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
A
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
W
1.6  
Linear Derating Factor  
20  
mW/°C  
VGS  
Gate-to-Source Voltage  
± 12  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
50  
°C/W  
1
www.irf.com © 2013 International Rectifier  
Submit Datasheet Feedback  
November 20, 2013  

与IRF7425PBF-1相关器件

型号 品牌 描述 获取价格 数据表
IRF7425TRPBF INFINEON Ultra Low On-Resistance

获取价格

IRF7425TRPBF-1 INFINEON Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Me

获取价格

IRF742FI ETC TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB

获取价格

IRF742R ETC TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-220AB

获取价格

IRF743 FAIRCHILD N-Channel Power MOSFETs, 10A, 350V/400V

获取价格

IRF743 VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

获取价格