Datasheet > IRF7424PBF-1

IRF7424PBF-1

更新时间： 2024-02-05 02:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	190K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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IRF7424PBF-1 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

IRF7424PBF-1 数据手册

IRF7424PbF-1

HEXFET^®Power MOSFET

V_DS

-30

R_{DS(on) max}

(@V_GS= -10V)

R_{DS(on) max}

(@V_GS= -4.5V)

Q_{g (typical)}

I_D

13.5

SO-8

Top View

-11

(@T_A= 25°C)

Features

Industry-standard pinout SO-8 Package

Benefits

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7424PbF-1

IRF7424TRPbF-1

IRF7424PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-30

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-11

-9.3

-47

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

1.6

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

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