IRF7422D2

更新时间： 2024-11-19 11:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	123K
描述
FETKY-TM MOSFET AND Schottky Diode

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中文翻译

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技术参数
数据手册

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IRF7422D2 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.79
Is Samacsys：	N	Base Number Matches：	1

IRF7422D2 数据手册

PD-91412L

IRF7422D2

FETKY MOSFET & Schottky Diode

ꢀ Co-packaged HEXFET Power

MOSFET and Schottky Diode

ꢀ Ideal For Buck Regulator Applications

ꢀ P-Channel HEXFET

ꢀ Low V_FSchottky Rectifier

ꢀ Generation 5 Technology

ꢀ SO-8 Footprint

V_DSS= -20V

R_DS(on)= 0.09Ω

Schottky Vf = 0.52V

Top View

Description

The FETKY^TMfamily of Co-packaged HEXFETs and

Schottky diodes offer the designer an innovative

board space saving solution for switching regulator

and power management applications. Generation 5

HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combinining this technology with International

Rectifier's low forward drop Schottky rectifiers results

in an extremely efficient device suitable for use in a

wide variety of portable electronics applications.

SO-8

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The

SO-8 package is designed for vapor phase, infrared or

wave soldering techniques.

Absolute Maximum Ratings

Parameter

Maximum

Units

I_D@ T_A= 25°C

-4.3

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current ➃

I_D@ T_A= 70°C

I_DM

-3.4

-33

P_D@T_A= 25°C

P_D@T_A= 70°C

2.0

Power Dissipation

1.3

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 12

dv/dt

Peak Diode Recovery dv/dt ➃

Junction and Storage Temperature Range

-5.0

V/ns

°C

T_J,T_STG

-55 to +150

Thermal Resistance Ratings

Parameter

Maximum

Units

R_θJA

Junction-to-Ambient ➃

62.5

°C/W

Notes:

ꢀ Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

ꢁ I_SD≤ -2.2A, di/dt ≤ -50A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

ꢂ Pulse width ≤ 300µs – duty cycle ≤ 2%

ꢃ Surface mounted on FR-4 board, t ≤ 10sec.

www.irf.com

11/27/01

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中文翻译

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