Datasheet > IRF7420TRPBF-1

IRF7420TRPBF-1

更新时间： 2024-01-09 23:57:22

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	190K
描述
Power Field-Effect Transistor

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数据手册

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IRF7420TRPBF-1 数据手册

IRF7420PbF-1

5500

5000

4500

4000

3500

3000

2500

2000

1500

1000

500

-11.5A

= 0V, f = 1 MHZ

= C + C , C

=-9.6V

=-6V

SHORTED

iss

gd ds

= C

rss

oss

= C + C

Ciss

Coss

Crss

100

Q , Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

100us

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.2

0.1

0.4

0.6

0.8

1.0

1.2

100

-V ,Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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June 30, 2014

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