Datasheet > IRF7421D1_98

IRF7421D1_98

更新时间： 2024-11-23 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	178K
描述
MOSFET / Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7421D1_98 数据手册

PD- 91411C

IRF7421D1

PRELIMINARY

FETKY MOSFET / Schottky Diode

l Co-packaged HEXFET^®Power

MOSFET and Schottky Diode

l Ideal For Synchronous Regulator

Applications

l Generation V Technology

l SO-8 Footprint

V_DSS= 30V

R_DS(on)= 0.035Ω

Schottky Vf = 0.39V

Top View

Description

The FETKY^TMfamily of co-packaged HEXFETs and Schottky diodes offer

the designer an innovative board space saving solution for switching

regulator applications. Generation 5 HEXFETs utilize advanced processing

techniquestoachieveextremelylowon-resistancepersiliconarea. Combining

this technology with International Rectifier's low forward drop Schottky

rectifiers results in an extremely efficient device suitable for use in a wide

variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics. The SO-8 package is designed for vapor phase,

infrared or wave soldering techniques.

SO -8

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Parameter

Maximum

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@10V➃

5.8

4.6

Pulsed Drain Current ➀

Power Dissipation ➃

P_D@T_A= 25°C

P_D@T_A= 70°C

2.0

1.3

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

± 20

-5.0

dv/dt

Peak Diode Recovery dv/dt ➁

Junction and Storage Temperature Range

V/ns

°C

T_J,T_STG

-55 to +150

Thermal Resistance Ratings

Parameter

Maximum

Units

R_θJA

Junction-to-Ambient ➃

62.5

°C/W

Notes:

➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)

➁ I_SD≤ 4.1A, di/dt ≤ 110A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

➂ Pulse width ≤ 300µs; duty cycle ≤ 2%

➃ Surface mounted on FR-4 board, t ≤ 10sec.

www.irf.com

8/20/98

7421d1.p65

8/20/98, 4:07 PM

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF7421D1_98相关器件

型号	品牌	获取价格	描述	数据表
IRF7421D1PBF	INFINEON	获取价格	FETKY MOSFET / Schottky Diode
IRF7421D1TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
IRF7422D2	INFINEON	获取价格	FETKY-TM MOSFET AND Schottky Diode
IRF7422D2PBF	INFINEON	获取价格	FETKY⑩MOSFET &Schottky Diode
IRF7422D2TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Met
IRF7422D2TRR	INFINEON	获取价格	Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
IRF7424	INFINEON	获取价格	Ultra Low On-Resistance
IRF7424PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7424PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF7424TR	INFINEON	获取价格	Ultra Low On-Resistance