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IRF7421D1TRPBF PDF预览

IRF7421D1TRPBF

更新时间: 2024-11-23 20:49:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 172K
描述
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

IRF7421D1TRPBF 数据手册

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PD- 91411D  
IRF7421D1  
FETKYäMOSFET / Schottky Diode  
l Co-packaged HEXFET® Power  
MOSFET and Schottky Diode  
l Ideal For Synchronous Regulator  
Applications  
l Generation V Technology  
l SO-8 Footprint  
A
A
D
1
8
7
A
S
S
G
VDSS = 30V  
2
3
4
D
6
5
D
D
R
DS(on) = 0.035Ω  
Schottky Vf = 0.39V  
Top View  
Description  
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer  
the designer an innovative board space saving solution for switching  
regulator applications. Generation 5 HEXFETs utilize advanced processing  
techniquestoachieveextremelylowon-resistancepersiliconarea. Combining  
this technology with International Rectifier's low forward drop Schottky  
rectifiers results in an extremely efficient device suitable for use in a wide  
variety of portable electronics applications.  
The SO-8 has been modified through a customized leadframe for enhanced  
thermal characteristics. The SO-8 package is designed for vapor phase,  
infrared or wave soldering techniques.  
SO-8  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Parameter  
Maximum  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS@10VÃ  
5.8  
4.6  
A
Pulsed Drain Current À  
Power Dissipation à  
46  
PD @TA = 25°C  
PD @TA = 70°C  
2.0  
W
1.3  
Linear Derating Factor  
16  
W/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
-5.0  
dv/dt  
Peak Diode Recovery dv/dt Á  
Junction and Storage Temperature Range  
V/ns  
°C  
TJ, TSTG  
-55 to +150  
Thermal Resistance Ratings  
Parameter  
Maximum  
Units  
RθJA  
Junction-to-Ambient à  
62.5  
°C/W  
Notes:  
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)  
Á ISD 4.1A, di/dt 110A/µs, VDD V(BR)DSS, TJ 150°C  
 Pulse width 300µs; duty cycle 2%  
à Surface mounted on FR-4 board, t 10sec.  
www.irf.com  
1
10/18/04  

IRF7421D1TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7421D1PBF INFINEON

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FETKY MOSFET / Schottky Diode
IRF7421D1 INFINEON

类似代替

MOSFET & Schottky Diode

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