Datasheet > IRF7420TRPBF

IRF7420TRPBF

更新时间： 2024-01-23 11:21:58

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
9页	158K
描述
Transistor,

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技术参数
数据手册

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IRF7420TRPBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.53
配置：	Single	最大漏极电流 (Abs) (ID)：	11.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

IRF7420TRPBF 数据手册

PD - 95633A

IRF7420PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Lead-Free

V_DSS

-12V

R_DS(on)max

14mΩ@V_GS= -4.5V -11.5A

17.5mΩ@V_GS= -2.5V -9.8A

I_D

26mΩ@V_GS= -1.8V

-8.1A

Description

These P-Channel HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievetheextremelylowon-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

SO-8

Top View

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-11.5

-9.2

-46

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

1.6

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

±8

T_J,T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

8/25/06

12 3 4 5 6 7...9

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