Datasheet > IRF7416TRPBF-1

IRF7416TRPBF-1

更新时间： 2023-02-26 14:13:09

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	226K
描述
Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET

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中文翻译

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数据手册
替代型号

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IRF7416TRPBF-1 数据手册

IRF7416PbF-1

HEXFET^®Power MOSFET

V_DS

-30

0.020

R_{DS(on) max}

(@V_GS= -10V)

Q_{g (typical)}

I_D

-10

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tube/Bulk

Tape and Reel

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7416PbF-1

IRF7416TRPbF-1

IRF7416PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

-10

-7.1

-45

W/°C

Power Dissipation

2.5

@T_A= 25°C

Linear Derating Factor

Gate-to-Source Voltage

0.02

± 20

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

370

-5.0

dv/dt

V/ns

-55 to + 150

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Max.

Units

R_θJA

Junction-to-Ambient

°C/W

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November 19, 2013

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IRF7416TRPBF-1 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7416QTR	INFINEON	类似代替	Advanced Process Technology Low On-Resistance
AUIRF7416Q	INFINEON	类似代替	Advanced Process Technology Low On-Resistance
IRF7416PBF	INFINEON	类似代替	HEXFET Power MOSFET

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