IRF7420TR

更新时间： 2024-11-19 13:00:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	107K
描述
Transistor

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数据手册
替代型号

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IRF7420TR 数据手册

PD - 94278

IRF7420

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

V_DSS

-12V

R_DS(on)max

14mΩ@V_GS= -4.5V -11.5A

I_D

17.5mΩ@V_GS= -2.5V -9.8A

l Available in Tape & Reel

26mΩ@V_GS= -1.8V

-8.1A

Description

These P-Channel HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievetheextremelylowon-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

SO-8

Top View

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-11.5

-9.2

-46

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

±8

T_J,T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

07/11/01

12 3 4 5 6 7...9

中文翻译

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IRF7420TR 替代型号

型号	品牌	替代类型	描述	数据表
IRF7420TRPBF	INFINEON	类似代替	Transistor,

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