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AUIRF7416Q PDF预览

AUIRF7416Q

更新时间： 2024-11-25 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 228K
描述
Advanced Process Technology Low On-Resistance

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中文翻译

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AUIRF7416Q 数据手册

 浏览型号AUIRF7416Q的Datasheet PDF文件第2页浏览型号AUIRF7416Q的Datasheet PDF文件第3页浏览型号AUIRF7416Q的Datasheet PDF文件第4页浏览型号AUIRF7416Q的Datasheet PDF文件第5页浏览型号AUIRF7416Q的Datasheet PDF文件第6页浏览型号AUIRF7416Q的Datasheet PDF文件第7页 
PD - 97642  
AUTOMOTIVE GRADE  
AUIRF7416Q  
Features  
HEXFET® Power MOSFET  
l
l
l
l
Advanced Process Technology  
LowOn-Resistance  
A
P-ChannelMOSFET  
Dynamic dV/dT Rating  
150°C Operating Temperature  
Fast Switching  
1
2
3
4
8
7
D
D
D
D
S
S
S
V(BR)DSS  
-30V  
0.02  
l
6
5
RDS(on) max.  
ID  
Ω
l
l
l
l
G
Fully Avalanche Rated  
Lead-Free, RoHS Compliant  
Automotive Qualified*  
-10A  
Top View  
Description  
Specifically designed for Automotive applications, this cel-  
lular design of HEXFET® Power MOSFETs utilizes the lat-  
est processing techniques to achieve low on-resistance per  
silicon area. This benefit combined with the fast switching  
speed and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer with an  
extremely efficient and reliable device for use in Automo-  
tive and a wide variety of other applications.  
SO-8  
AUIRF7416Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-  
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The  
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature  
(TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ -10V  
Max.  
-10  
Units  
I
I
I
@ TA = 25°C  
@ TA = 70°C  
D
D
Continuous Drain Current, VGS @ -10V  
A
-7.1  
-45  
Pulsed Drain Current  
DM  
W
mW/°C  
V
P
@TA = 25°C  
Power Dissipation  
2.5  
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.02  
± 20  
V
GS  
EAS  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
370  
-5.0  
mJ  
dv/dt  
V/ns  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Junction-to-Ambient  
50  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/28/2011  
1234567...12

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AUIRF7416Q 替代型号

型号 品牌 替代类型 描述 数据表
IRF9333PBF INFINEON

类似代替

 HEXFET Power MOSFET
IRF7416PBF INFINEON

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 HEXFET Power MOSFET

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