Datasheet > IRF7416TR

IRF7416TR

更新时间： 2024-11-20 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	433K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-10A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@-10V

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数据手册

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IRF7416TR 数据手册

UMW

IRF7416

P-Channel 30 V (D-S) MOSFET

FEATURES

Low On-Resistance

P-Channel Mosfet

Surface Mount

dv/dt Rating

Fast Switching

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

-10

-7.1

-45

W/°C

Power Dissipation

2.5

@T_A= 25°C

Linear Derating Factor

Gate-to-Source Voltage

0.02

± 20

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

370

-5.0

dv/dt

V/ns

-55 to + 150

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Max.

Units

R_θJA

Junction-to-Ambient

°C/W

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

-30 ––– –––

Conditions

V_GS= 0V, I_D= -250μA

V_(BR)DSS

/ T

_(BR)DSSΔ

Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, I_D= -1mA

_GS= -10V, I_D= -5.6A

_GS= -4.5V, I_D= -2.8A

–––

R_DS(on)

Static Drain-to-Source On-Resistance

V_GS(th)

gfs

I_DSS

Gate Threshold Voltage

-1.0 ––– -2.04

5.6 ––– –––

––– ––– -1.0

––– ––– -25

V_DS= V_GS, I_D= -250μA

Forward Transconductance

Drain-to-Source Leakage Current

_DS= -10V, I_D= -2.8A

_DS= -24V, V_GS= 0V

_DS= -24V, V_GS= 0V, T_J= 125°C

_GS= -20V

μA

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– -100

––– ––– 100

_GS= 20V

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