Datasheet > IRF7413ZUTRPBF

IRF7413ZUTRPBF

更新时间： 2024-11-20 21:17:35

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器脉冲光电二极管晶体管
页数	文件大小	规格书
10页	262K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

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IRF7413ZUTRPBF 数据手册

PD - 96069A

IRF7413ZUPbF

HEXFET^®Power MOSFET

Applications

l Control FET for Notebook Processor

V_DSS

30V

R_DS(on)max

10m @V_GS= 10V

I_D

13A

Power

l Control and Synchronous Rectifier

MOSFET for Graphics Cards and POL

Converters in Computing, Networking

and Telecommunication Systems

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

l 100%TestedforR_G

l Lead-Free

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

100

2.5

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through are on page 10

www.irf.com

09/14/06

12 3 4 5 6 7...10

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