Datasheet > IRF7416QTRPBF

IRF7416QTRPBF

更新时间： 2024-11-23 21:04:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	265K
描述
Transistor,

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中文翻译

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数据手册
替代型号

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IRF7416QTRPBF 数据手册

PD - 96124

IRF7416QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

P Channel MOSFET

V_DSS= -30V

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Automotive [Q101] Qualified

Lead-Free

_DS(on)= 0.02Ω

Top View

Description

Specifically designed for Automotive applications, these

HEXFET^®Power MOSFET's in package utilize the lastest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a

150°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating. These

benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and

a wide variety of other applications.

SO-8

The efficient SO-8 package provides enhanced thermal

characteristics making it ideal in a variety of power

applications. This surface mount SO-8 can dramatically

reduce board space and is also available in Tape & Reel.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@ - 10V

Pulsed Drain Current

-10

-7.1

-45

P_D@T_A= 25°C

Power Dissipation

2.5

mW/°C

Linear Derating Factor

0.02

± 20

370

-5.0

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

dv/dt

T_J,T_STG

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambientꢀ

°C/W

www.irf.com

08/29/07

12 3 4 5 6 7...9

中文翻译

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IRF7416QTRPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7416QTR	INFINEON	功能相似	Advanced Process Technology Low On-Resistance

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