Datasheet > IPB042N03LG

IPB042N03LG

更新时间： 2024-09-15 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	370K
描述
IPB042N03LG

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中文翻译

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数据手册

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IPB042N03LG 数据手册

Type

IPP042N03L G

IPB042N03L G

OptiMOS™3 Power-Transistor

Product Summary

Features

V _DS

4.2

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

IPP042N03L G

IPB042N03L G

Package

Marking

PG-TO220-3-1

042N03L

PG-TO263-3

042N03L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

V _GS=10 V, T _C=100 °C

V _GS=4.5 V, T _C=25 °C

_GS=4.5 V,

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

400

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

T _C=25 °C

E _AS

I _D=50 A, R _GS=25 Ω

I _D=70 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

¹⁾J-STD20 and JESD22

±20

Rev. 2.0

page 1

2010-02-22

12 3 4 5 6 7...10

中文翻译

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