5秒后页面跳转
IPB049N08N5 PDF预览

IPB049N08N5

更新时间: 2024-11-10 11:14:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 1168K
描述
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. 

IPB049N08N5 数据手册

 浏览型号IPB049N08N5的Datasheet PDF文件第2页浏览型号IPB049N08N5的Datasheet PDF文件第3页浏览型号IPB049N08N5的Datasheet PDF文件第4页浏览型号IPB049N08N5的Datasheet PDF文件第5页浏览型号IPB049N08N5的Datasheet PDF文件第6页浏览型号IPB049N08N5的Datasheet PDF文件第7页 
MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
OptiMOSTM  
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
IPB049N08N5  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  

与IPB049N08N5相关器件

型号 品牌 获取价格 描述 数据表
IPB049NE7N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor
IPB049NE7N3GATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IPB04CN10NG INFINEON

获取价格

OptiMOS™2 Power-Transistor
IPB04CN10NGATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
IPB04CNE8NG INFINEON

获取价格

OptiMOS™2 Power-Transistor
IPB04N03L INFINEON

获取价格

OptiMOS Buck converter series
IPB04N03LA INFINEON

获取价格

OptiMOS 2 Power-Transistor
IPB04N03LAG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPB04N03LB INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPB050N06L INFINEON

获取价格

OptiMOS㈢ Power-Transistor