Datasheet > HGTG30N60B3D

HGTG30N60B3D

更新时间： 2024-11-06 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管功率控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
7页	112K
描述
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG30N60B3D 数据手册

HGTG30N60B3D

Data Sheet

January 2000

File Number 4446.2

60A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 60A, 600V, T = 25 C

The HGTG30N60B3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. This device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49170. The diode

used in anti-parallel with the IGBT is the development type

TA49053.

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49172.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G30N60B3D

HGTG30N60B3D

TO-247

Symbol

NOTE: When ordering, use the entire part number.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

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HGTG30N60B3D 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG30N60B3D相关器件

型号	品牌	获取价格	描述	数据表
HGTG30N60B3D_04	FAIRCHILD	获取价格	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
HGTG30N60C3	INTERSIL	获取价格	63A, 600V, UFS Series N-Channel IGBT
HGTG30N60C3D	HARRIS	获取价格	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60C3D	ROCHESTER	获取价格	63A, 600V, N-CHANNEL IGBT, TO-247
HGTG30N60C3D	INTERSIL	获取价格	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTG30N60C3D	FAIRCHILD	获取价格	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTG30N60C3D	ONSEMI	获取价格	600V, PT IGBT
HGTG30N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG30N60C3D_NL	ROCHESTER	获取价格	63A, 600V, N-CHANNEL IGBT, TO-247

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