HGTG32N60E2
32A, 600V N-Channel IGBT
April 1995
Features
Package
JEDEC STYLE TO-247
• 32A, 600V
EMITTER
• Latch Free Operation
• Typical Fall Time - 600ns
• High Input Impedance
• Low Conduction Loss
COLLECTOR
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
Description
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25oC
and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
C
This device incorporates generation two design techniques
which yield improved peak current capability and larger short cir-
cuit withstand capability than previous designs.
PACKAGING AVAILABILITY
G
E
PART NUMBER
PACKAGE
TO-247
BRAND
G32N60E2
HGTG32N60E2
NOTE: When ordering, use the entire part number.
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTG32N60E2
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
600
50
V
V
A
A
A
V
V
-
CES
CGR
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C25
C90
o
at V = 15V, at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
32
GE
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
200
±20
±30
CM
GES
GEM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200A at 0.8 BV
J
CES
o
208
1.67
-55 to +150
W
C
D
o
o
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
260
3
15
L
SC
SC
Short Circuit Withstand Time (Note 2)at V = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t
µs
µs
GE
at V = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . t
GE
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = +125 C, R = 25Ω.
C GE
CE(PEAK)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 2828.3
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-120
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