Datasheet > HGTG40N60A4

HGTG40N60A4

更新时间： 2024-09-16 22:19:47

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
8页	96K
描述
600V, SMPS Series N-Channel IGBT

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

HGTG40N60A4 数据手册

HGTG40N60A4

Data Sheet

April 2000

File Number 4782.2

600V, SMPS Series N-Channel IGBT

Features

The HGTG40N60A4 is a MOS gated high voltage switching

device combining the best features of a MOSFET and a

bipolar transistor. This device has the high input impedance

of a MOSFET and the low on-state conduction loss of a

bipolar transistor. The much lower on-state voltage drop

varies only moderately between 25 C and 150 C. This IGBT

is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses

are essential. This device has been optimized for high

frequency switch mode power supplies.

• 100kHz Operation At 390V, 40A

• 200kHz Operation At 390V, 20A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T = 125

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49347.

Ordering Information

PART NUMBER

PACKAGE

BRAND

40N60A4

HGTG40N60A4

TO-247

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-1

12 3 4 5 6 7 8

中文翻译

下载PDF

HGTG40N60A4 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG40N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGTG40N60A4_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247. 3 P
HGTG40N60B3	INTERSIL	获取价格	70A, 600V, UFS Series N-Channel IGBT
HGTG40N60B3	FAIRCHILD	获取价格	70A, 600V, UFS Series N-Channel IGBT
HGTG40N60B3	HARRIS	获取价格	70A, 600V, UFS Series N-Channel IGBT
HGTG40N60B3	ONSEMI	获取价格	600V，PT IGBT
HGTG40N60B3_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
HGTG40N60C3	INTERSIL	获取价格	75A, 600V, UFS Series N-Channel IGBT
HGTG40N60C3	FAIRCHILD	获取价格	75A, 600V, UFS Series N-Channel IGBT
HGTG40N60C3R	RENESAS	获取价格	75A, 600V, N-CHANNEL IGBT, TO-247
HGTG40N60C3R	ROCHESTER	获取价格	75A, 600V, N-CHANNEL IGBT, TO-247

与HGTG40N60A4相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

15
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

14
SL74HC10N：高性能三输入与非门解析
2024-09-03

93
AIC1781A 电池充电控制器深度解析
2024-09-03

82

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTG40N60A4

HGTG40N60A4 数据手册

HGTG40N60A4 替代型号

与HGTG40N60A4相关器件

与HGTG40N60A4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTG40N60A4

HGTG40N60A4 数据手册

HGTG40N60A4 替代型号

与HGTG40N60A4相关器件

与HGTG40N60A4相关文章

您还可以找

您在本页遇到什么问题？