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HGTG5N120BND PDF预览

HGTG5N120BND

更新时间: 2024-09-16 22:19:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管晶体管电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
8页 212K
描述
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGTG5N120BND 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
包装说明:TO-247, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.76
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):21 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):200 ns
门极-发射极最大电压:20 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):167 W认证状态:Not Qualified
最大上升时间(tr):20 ns子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):357 ns
标称接通时间 (ton):35 nsBase Number Matches:1

HGTG5N120BND 数据手册

 浏览型号HGTG5N120BND的Datasheet PDF文件第2页浏览型号HGTG5N120BND的Datasheet PDF文件第3页浏览型号HGTG5N120BND的Datasheet PDF文件第4页浏览型号HGTG5N120BND的Datasheet PDF文件第5页浏览型号HGTG5N120BND的Datasheet PDF文件第6页浏览型号HGTG5N120BND的Datasheet PDF文件第7页 
HGTG5N120BND, HGTP5N120BND  
Data Sheet  
May 2003  
21A, 1200V, NPT Series N-Channel IGBTs  
with Anti-Parallel Hyperfast Diodes  
Features  
o
• 21A, 1200V, T = 25 C  
C
The HGTG5N120BND and HGTP5N120BND are Non-  
Punch Through (NPT) IGBT designs. They are new  
members of the MOS gated high voltage switching IGBT  
family. IGBTs combine the best features of MOSFETs and  
bipolar transistors. This device has the high input impedance  
of a MOSFET and the low on-state conduction loss of a  
bipolar transistor. The IGBT used is the development type  
TA49308. The Diode used is the development type TA49058  
(Part number RHRD6120).  
• 1200V Switching SOA Capability  
o
Typical Fall Time . . . . . . . . . . . . . . . . 175ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.fairchildsemi.com  
• Related Literature  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Packaging  
JEDEC STYLE TO-247  
Formerly Developmental Type TA49306.  
E
C
Ordering Information  
COLLECTOR  
(FLANGE)  
G
PART NUMBER  
HGTG5N120BND  
HGTP5N120BND  
PACKAGE  
TO-247  
TO-220AB  
BRAND  
5N120BND  
5N120BND  
NOTE: When ordering, use the entire part number. i.e.,  
HGTG5N120BND.  
JEDEC TO-220AB (ALTERNATE VERSION)  
Symbol  
C
COLLECTOR  
(FLANGE)  
E
C
G
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2003 Fairchild Semiconductor Corporation  
HGTG5N120BND, HGTP5N120BND, Rev. B1  

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