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HGTH20N50C1D

更新时间： 2024-11-24 22:32:55
品牌 Logo 应用领域
英特矽尔 - INTERSIL 二极管双极性晶体管
页数 文件大小 规格书
6页 39K
描述
20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

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中文翻译

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HGTH20N50C1D 数据手册

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HGTH20N40C1D, HGTH20N40E1D,  
HGTH20N50C1D, HGTH20N50E1D  
20A, 400V and 500V N-Channel IGBTs  
with Anti-Parallel Ultrafast Diodes  
April 1995  
Features  
Package  
JEDEC TO-218AC  
• 20A, 400V and 500V  
• VCE(ON) 2.5V Max.  
• TFALL 1µs, 0.5µs  
EMITTER  
COLLECTOR  
COLLECTOR  
(FLANGE)  
GATE  
• Low On-State Voltage  
• Fast Switching Speeds  
• High Input Impedance  
• Anti-Parallel Diode  
Terminal Diagram  
Applications  
• Power Supplies  
• Motor Drives  
N-CHANNEL ENHANCEMENT MODE  
C
• Protective Circuits  
G
Description  
E
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,  
and HGTH20N50E1D are n-channel enhancement-mode  
insulated gate bipolar transistors (IGBTs) designed for high  
voltage, low on-dissipation applications such as switching  
regulators and motor drivers. They feature a discrete anti-  
parallel diode that shunts current around the IGBT in the  
reverse direction without introducing carriers into the  
depletion region. These types can be operated directly from  
low power integrated circuits.  
PACKAGING AVAILABILITY  
PACKAGE  
PART NUMBER  
HGTH20N40C1D  
HGTH20N40E1D  
HGTH20N50C1D  
HGTH20N50E1D  
BRAND  
TO-218AC  
TO-218AC  
TO-218AC  
TO-218AC  
G20N40C1D  
G20N40E1D  
G20N50C1D  
G20N50E1D  
NOTE: When ordering, use the entire part number.  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTH20N40C1D  
HGTH20N50C1D  
HGTH20N40E1D  
HGTH20N50E1D  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
400  
400  
±20  
20  
35  
35  
20  
100  
0.8  
500  
500  
±20  
20  
35  
35  
20  
100  
0.8  
V
V
V
A
A
A
A
W
CES  
CGR  
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GE  
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
GE  
C
CM  
F25  
F90  
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
o
Diode Forward Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . I  
C
o
at T = +90 C. . . . . . . . . . . . . . . . . . . . . . I  
J
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
C
D
o
o
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T , T  
-55 to +150  
-55 to +150  
C
J
STG  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2271.4  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-76  
123456

中文翻译

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与HGTH20N50C1D相关器件

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HGTH20N50E1 INTERSIL

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 		15A, 20A, 400V and 500V N-Channel IGBTs
HGTH20N50E1D INTERSIL

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 		20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTM12N40C1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,12A I(C),TO-204AA
HGTM12N40E1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,12A I(C),TO-204AA
HGTM12N50C1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,12A I(C),TO-204AA
HGTM12N50E1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,12A I(C),TO-204AA
HGTM12N60D1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,21A I(C),TO-204AA
HGTM20N40C1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,20A I(C),TO-204AA
HGTM20N40E1 RENESAS

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 		暂无描述
HGTM20N50C1 RENESAS

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 		TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,20A I(C),TO-204AA

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