是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
最大集电极电流 (IC): | 21 A | 集电极-发射极最大电压: | 600 V |
最大降落时间(tf): | 600 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 25 V | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTM20N40C1 | RENESAS |
获取价格 |
TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,20A I(C),TO-204AA | |
HGTM20N40E1 | RENESAS |
获取价格 |
暂无描述 | |
HGTM20N50C1 | RENESAS |
获取价格 |
TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,20A I(C),TO-204AA | |
HGTM20N50E1 | RENESAS |
获取价格 |
TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,20A I(C),TO-204AA | |
HGTM24N60D1 | RENESAS |
获取价格 |
TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,40A I(C),TO-204AA | |
HGTP10N120B3 | RENESAS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-220AB | |
HGTP10N120B3D | RENESAS |
获取价格 |
1200V, N-CHANNEL IGBT, TO-220AB | |
HGTP10N120BN | INTERSIL |
获取价格 |
35A, 1200V, NPT Series N-Channel IGBT | |
HGTP10N120BN | ONSEMI |
获取价格 |
1200V,NPT IGBT | |
HGTP10N120BN | FAIRCHILD |
获取价格 |
35A, 1200V, NPT Series N-Channel IGBT |