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HGTP12N60A4_NL PDF预览

HGTP12N60A4_NL

更新时间： 2024-09-17 21:15:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网LTE栅瞄准线功率控制晶体管
页数 文件大小 规格书
8页 229K
描述
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, TO-220AB ALTERNATE VERSION, 3 PIN

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HGTP12N60A4_NL 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.58
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：54 A集电极-发射极最大电压：600 V
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：180 ns
标称接通时间 (ton)：33 nsBase Number Matches：1

HGTP12N60A4_NL 数据手册

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HGTP12N60A4, HGTG12N60A4,  
HGT1S12N60A4S9A  
Data Sheet  
August 2003  
600V, SMPS Series N-Channel IGBTs  
Features  
The HGTP12N60A4, HGTG12N60A4 and  
• >100kHz Operation at 390V, 12A  
• 200kHz Operation at 390V, 9A  
HGT1S12N60A4S9A are MOS gated high voltage switching  
devices combining the best features of MOSFETs and  
bipolar transistors. These devices have the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C  
J
o
o
• Low Conduction Loss  
drop varies only moderately between 25 C and 150 C.  
• Related Literature  
This IGBT is ideal for many high voltage switching  
applications operating at high frequencies where low  
conduction losses are essential. This device has been  
optimized for high frequency switch mode power supplies.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards  
Formerly Developmental Type TA49335.  
Packaging  
JEDEC TO-220AB ALTERNATE VERSION  
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
12N60A4  
COLLECTOR  
(FLANGE)  
HGTP12N60A4  
TO-220AB  
HGTG12N60A4  
TO-247  
12N60A4  
12N60A4  
E
C
G
HGT1S12N60A4S9A  
TO-263AB  
NOTE: When ordering, use the entire part number.  
JEDEC TO-263AB  
Symbol  
C
COLLECTOR  
(FLANGE)  
G
G
E
JEDEC STYLE TO-247  
E
E
C
G
COLLECTOR  
(BOTTOM SIDE METAL)  
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2003 Fairchild Semiconductor Corporation  
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2  
12345678

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