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HGTP12N60C3 PDF预览

HGTP12N60C3

更新时间： 2024-11-06 22:51:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
7页 173K
描述
24A, 600V, UFS Series N-Channel IGBTs

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中文翻译

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HGTP12N60C3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.08
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：24 A集电极-发射极最大电压：600 V
配置：SINGLE最大降落时间（tf）：275 ns
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT APPLICABLE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：480 ns
标称接通时间 (ton)：30 nsBase Number Matches：1

HGTP12N60C3 数据手册

 浏览型号HGTP12N60C3的Datasheet PDF文件第2页浏览型号HGTP12N60C3的Datasheet PDF文件第3页浏览型号HGTP12N60C3的Datasheet PDF文件第4页浏览型号HGTP12N60C3的Datasheet PDF文件第5页浏览型号HGTP12N60C3的Datasheet PDF文件第6页浏览型号HGTP12N60C3的Datasheet PDF文件第7页 
HGTP12N60C3, HGT1S12N60C3S  
Data Sheet  
December 2001  
24A, 600V, UFS Series N-Channel IGBTs  
Features  
o
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated  
high voltage switching devices combining the best features  
of MOSFETs and bipolar transistors. These devices have the  
high input impedance of a MOSFET and the low on-state  
conduction loss of a bipolar transistor. The much lower  
• 24A, 600V at T = 25 C  
C
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
o
on-state voltage drop varies only moderately between 25 C  
o
and 150 C.  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
Packaging  
JEDEC TO-220AB  
EMITTER  
COLLECTOR  
GATE  
Formerly Developmental Type TA49123.  
COLLECTOR  
(FLANGE)  
Ordering Information  
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
P12N60C3  
S12N60C3  
HGTP12N60C3  
HGT1S12N60C3S  
JEDEC TO-263AB  
COLLECTOR  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in Tape and Reel, i.e.,  
HGT1S12N60C3S9A.  
GATE  
(FLANGE)  
Symbol  
EMITTER  
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTP12N60C3, HGT1S12N60C3S Rev. B  
1234567

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HGTP12N60C3_NL FAIRCHILD

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 		24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D FAIRCHILD

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HGTP12N60C3D ONSEMI

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 		600V, UFS IGBT
HGTP12N60C3D_NL FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP12N60C3DR FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
HGTP12N60C3DR RENESAS

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 		24A, 600V, N-CHANNEL IGBT
HGTP12N60C3R ROCHESTER

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 		24A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP12N60C3R RENESAS

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 		24A, 600V, N-CHANNEL IGBT, TO-220AB
HGTP12N60C3R FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

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