Datasheet > HGTP14N37G3VL

HGTP14N37G3VL

更新时间： 2024-11-26 20:17:07

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网汽车点火栅瞄准线双极性晶体管
页数	文件大小	规格书
8页	127K
描述
25A, N-CHANNEL IGBT, TO-220AB

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技术参数
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HGTP14N37G3VL 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.26	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	25 A
配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR	门极发射器阈值电压最大值：	2.2 V
门极-发射极最大电压：	12 V	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	136 W
认证状态：	Not Qualified	最大上升时间（tr）：	7000 ns
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	AUTOMOTIVE IGNITION
晶体管元件材料：	SILICON	标称断开时间 (toff)：	10000 ns
标称接通时间 (ton)：	4000 ns	Base Number Matches：	1

HGTP14N37G3VL 数据手册

HGT1S14N37G3VLS, HGTP14N37G3VL

Data Sheet

July 2000

File Number 4857

14A, 370V N-Channel, Logic Level, Voltage

Clamping IGBTs

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in

automotive ignition circuits. Unique features include an

active voltage clamp between the collector and the gate

which provides Self Clamped Inductive Switching (SCIS)

capability in ignition circuits. Internal diodes provide ESD

protection for the logic level gate. Both a series resistor and

a shunt resister are provided in the gate circuit.

• ESD Gate Protection

• T = 175 C

• Internal Series and Shunt Gate Resistors

• Low Conduction Loss

• Ignition Energy Capable

Formerly Developmental Type TA49169.

Packaging

Ordering Information

JEDEC TO-263AB

PART NUMBER

HGT1S14N37G3VLS

HGTP14N37G3VL

PACKAGE

TO-263AB

TO-220AB

BRAND

14N37GVL

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A

Symbol

COLLECTOR

JEDEC TO-220AB

GATE

COLLECTOR

(FLANGE)

EMITTER

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7 8

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与HGTP14N37G3VL相关器件

型号	品牌	获取价格	描述	数据表
HGTP14N40F3VL	FAIRCHILD	获取价格	330mJ, 400V, N-Channel Ignition IGBT
HGTP14N40F3VL	INTERSIL	获取价格	14A, 400V N-Channel, Logic Level Voltage Clamping IGBT
HGTP14N41G3VL	FAIRCHILD	获取价格	14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP14N41G3VLS	FAIRCHILD	获取价格	14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP14N44G3VL	ROCHESTER	获取价格	27A, 490V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN
HGTP15N120C3	INTERSIL	获取价格	35A, 1200V, UFS Series N-Channel IGBTs
HGTP15N120C3	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-220AB
HGTP15N40C1	INTERSIL	获取价格	15A, 20A, 400V and 500V N-Channel IGBTs
HGTP15N40E1	INTERSIL	获取价格	15A, 20A, 400V and 500V N-Channel IGBTs
HGTP15N50C1	INTERSIL	获取价格	15A, 20A, 400V and 500V N-Channel IGBTs

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