Datasheet > HGTP20N60C3

HGTP20N60C3

更新时间： 2024-11-08 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		双极性晶体管
页数	文件大小	规格书
7页	84K
描述
45A, 600V, UFS Series N-Channel IGBT

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替代型号

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HGTP20N60C3 数据手册

HGTG20N60C3, HGTP20N60C3,

HGT1S20N60C3S

Data Sheet

January 2000

File Number 4492.2

45A, 600V, UFS Series N-Channel IGBT

Features

This family of MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

• 45A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

Formerly developmental type TA49178.

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

G20N60C3

HGTG20N60C3

TO-247

HGTP20N60C3

TO-220AB

TO-263AB

G20N60C3

COLLECTOR

(FLANGE)

HGT1S20N60C3S

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S20N60C3S9A.

JEDEC TO-220AB (ALTERNATE VERSION)

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

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HGTP20N60C3 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP20N60C3相关器件

型号	品牌	获取价格	描述	数据表
HGTP20N60C3R	FAIRCHILD	获取价格	40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTP2N120BN	INTERSIL	获取价格	12A, 1200V, NPT Series N-Channel IGBT
HGTP2N120BND	INTERSIL	获取价格	12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP2N120BND	RENESAS	获取价格	暂无描述
HGTP2N120CN	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP2N120CN9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel
HGTP2N120CND	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP2N120CNDS	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor

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