Datasheet > HGTP3N60C3D

HGTP3N60C3D

更新时间： 2024-09-16 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	276K
描述
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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HGTP3N60C3D 数据手册

HGTP3N60C3D, HGT1S3N60C3DS

Data Sheet

January 2000

File Number 4140.2

6A, 600V, UFS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diodes

Features

• 6A, 600V at T = 25 C

The HGTP3N60C3D, and HGT1S3N60C3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

25 C and 150 C. The IGBT used is the development type

TA49113. The diode used in anti-parallel with the IGBT is the

development type TA49055.

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses

are essential.

EMITTER

COLLECTOR

GATE

Formerly Developmental Type TA49119.

COLLECTOR (FLANGE)

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

G3N60C3D

HGTP3N60C3D

HGT1S3N60C3DS

JEDEC TO-263AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, i.e.,

HGT1S3N60C3DS9A.

COLLECTOR

(FLANGE)

Symbol

GATE

EMITTER

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGTP3N60C3D相关器件

型号	品牌	获取价格	描述	数据表
HGTP3N60C3D_07	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BN	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs
HGTP5N120BND	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND	RENESAS	获取价格	21A, 1200V, N-CHANNEL IGBT, TO-220AB
HGTP5N120BND	ONSEMI	获取价格	1200V，NPT IGBT
HGTP5N120CN	INTERSIL	获取价格	25A, 1200V, NPT Series N-Channel IGBT
HGTP5N120CND	INTERSIL	获取价格	25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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