5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| HGTP5N120CNS9A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
|
| HGTP6N120B3D | RENESAS |
获取价格 |
1200V, N-CHANNEL IGBT, TO-220AB |
|
| HGTP7N60A4 | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT |
|
| HGTP7N60A4 | ROCHESTER |
获取价格 |
34A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN |
|
| HGTP7N60A4 | ONSEMI |
获取价格 |
IGBT，600V，SMPS |
|
| HGTP7N60A4 | INTERSIL |
获取价格 |
600V, SMPS Series N-Channel IGBT |
|
| HGTP7N60A4_NL | ROCHESTER |
获取价格 |
34A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN |
|
| HGTP7N60A4_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, |
|
| HGTP7N60A4D | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
|
| HGTP7N60A4D | INTERSIL |
获取价格 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
