Datasheet > HGTP7N60C3D_05

HGTP7N60C3D_05

更新时间： 2024-09-29 04:21:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管双极性晶体管
页数	文件大小	规格书
9页	541K
描述
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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HGTP7N60C3D_05 数据手册

September 2005

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description

Features

The

HGTP7N60C3D,

HGT1S7N60C3DS

and

4A, 600V at T_C= 25^oC

HGT1S7N60C3D are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25^oC and 150^oC. The

IGBT used is developmental type TA49115. The diode

used in anti-parallel with the IGBT is developmental type

TA49057.

600V Switching SOA Capability

Typical Fall Time...................140ns at T_J= 150^oC

Short Circuit Rating

Low Conduction Loss

Hyperfast Anti-Parallel Diode

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49121.

JEDEC TO-220AB

JEDEC TO-263AB

COLLECTOR (FLANGE)

GATE

COLLECTOR

(FLANGE)

EMITTER

COLLECTOR

GATE

EMITTER

JEDEC TO-262

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

Rev. B

www.fairchildsemi.com

12 3 4 5 6 7...9

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与HGTP7N60C3D_05相关器件

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HGTP7N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DR	RENESAS	获取价格	14A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3
HGTP7N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
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