Datasheet > HGTP7N60C3DR

HGTP7N60C3DR

更新时间： 2024-01-14 11:05:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		栅
页数	文件大小	规格书
9页	557K
描述
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3PIN

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技术参数
数据手册

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HGTP7N60C3DR 技术参数

生命周期：	Transferred	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.11
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	14 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	490 ns	标称接通时间 (ton)：	20 ns
Base Number Matches：	1

HGTP7N60C3DR 数据手册

September 2005

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description

Features

The

HGTP7N60C3D,

HGT1S7N60C3DS

and

14A, 600V at T_C= 25^oC

HGT1S7N60C3D are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25^oC and 150^oC. The

IGBT used is developmental type TA49115. The diode

used in anti-parallel with the IGBT is developmental type

TA49057.

600V Switching SOA Capability

Typical Fall Time...................140ns at T_J= 150^oC

Short Circuit Rating

Low Conduction Loss

Hyperfast Anti-Parallel Diode

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49121.

JEDEC TO-220AB

JEDEC TO-263AB

COLLECTOR (FLANGE)

GATE

COLLECTOR

(FLANGE)

EMITTER

COLLECTOR

GATE

EMITTER

JEDEC TO-262

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

Rev. B 1

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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与HGTP7N60C3DR相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60C3DS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGTP7N60C3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGTP7N60C3S	FAIRCHILD	获取价格	14A, 600V, N-CHANNEL IGBT, TO-252AA
HGTP7N60C3S9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
HGU065NE4A	CRMICRO	获取价格	TO-251
HGU09N06A	CRMICRO	获取价格	TO-251
HGU09N06A-G	CRMICRO	获取价格	TO-251
HGU10N04A	CRMICRO	获取价格	TO-251
HGV115	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV135	HAMMOND	获取价格	Systeme modulaire a profiles ajoures

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