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HGTP7N60C3D_NL

更新时间： 2024-01-28 23:16:25
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
6页 157K
描述
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3PIN

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中文翻译

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HGTP7N60C3D_NL 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.11
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：14 A集电极-发射极最大电压：600 V
配置：SINGLEJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：490 ns
标称接通时间 (ton)：20 nsBase Number Matches：1

HGTP7N60C3D_NL 数据手册

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HGTD7N60C3,  
HGTD7N60C3S, HGTP7N60C3  
S E M I C O N D U C T O R  
14A, 600V, UFS Series N-Channel IGBTs  
January 1997  
Features  
Packaging  
JEDEC TO-220AB  
o
• 14A, 600V at T = 25 C  
C
• 600V Switching SOA Capability  
COLLECTOR  
GATE  
EMITTER  
o
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
COLLECTOR (FLANGE)  
Description  
JEDEC TO-251AA  
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are  
MOS gated high voltage switching devices combining the  
best features of MOSFETs and bipolar transistors. These  
devices have the high input impedance of a MOSFET and  
the low on-state conduction loss of a bipolar transistor. The  
much lower on-state voltage drop varies only moderately  
COLLECTOR  
GATE  
EMITTER  
COLLECTOR  
(FLANGE)  
o
o
between 25 C and 150 C.  
JEDEC TO-252AA  
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction  
losses are essential, such as: AC and DC motor controls,  
power supplies and drivers for solenoids, relays and contactors.  
COLLECTOR  
(FLANGE)  
GATE  
EMITTER  
PACKAGING AVAILABILITY  
Terminal Diagram  
PART NUMBER  
HGTD7N60C3  
HGTD7N60C3S  
HGTP7N60C3  
PACKAGE  
TO-251AA  
BRAND  
G7N60C  
N-CHANNEL ENHANCEMENT MODE  
C
TO-252AA  
TO-220AB  
G7N60C  
G7N60C3  
NOTE: When ordering, use the entire part number.  
G
Add the suffix 9A to obtain the TO-252AA variant in tape and  
reel, i.e. HGTD7N60C3S9A.  
Formerly Developmental Type TA49115.  
E
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
HGTD7N60C3,HGTD7N60C3S  
HGTP7N60C3  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
600  
V
CES  
Collector Current Continuous  
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
14  
A
A
A
V
V
C25  
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
7
C
C110  
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
56  
CM  
GES  
GEM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±20  
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
o
±30  
Switching Safe Operating Area at T = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA  
40A at 480V  
J
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
60  
0.48  
100  
W
D
o
o
W/ C  
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E  
mJ  
ARV  
STG  
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T  
-40 to 150  
260  
C
J
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
C
L
SC  
SC  
Short Circuit Withstand Time (Note 2) at V  
Short Circuit Withstand Time (Note 2) at V  
NOTES:  
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t  
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t  
1
µs  
µs  
GE  
GE  
8
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
o
2. V  
CE(PK)  
= 360V, T = 125 C, R  
= 50Ω.  
J
GE  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.  
File Number 4141.2  
Copyright © Harris Corporation 1997  
3-16  
123456

中文翻译

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