Datasheet > HGTP7N60A4

HGTP7N60A4

更新时间： 2024-09-17 20:33:03

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		双极性晶体管
页数	文件大小	规格书
8页	157K
描述
34A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN

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中文翻译

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技术参数
数据手册

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HGTP7N60A4 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AB
包装说明：	TO-220AB, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.58
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	34 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
湿度敏感等级：	NOT APPLICABLE	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE	极性/信道类型：	N-CHANNEL
认证状态：	COMMERCIAL	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT APPLICABLE
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	205 ns	标称接通时间 (ton)：	17 ns
Base Number Matches：	1

HGTP7N60A4 数据手册

HGT1S7N60A4S9A, HGTG7N60A4

HGTP7N60A4

Data Sheet

September 2004

600V, SMPS Series N-Channel IGBT

Features

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4

are MOS gated high voltage switching devices combining

the best features of MOSFETs and bipolar transistors. These

devices have the high input impedance of a MOSFET and

the low on-state conduction loss of a bipolar transistor. The

much lower on-state voltage drop varies only moderately

• >100kHz Operation at 390V, 7A

• 200kHz Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at T = 125 C

• Low Conduction Loss

between 25 C and 150 C.

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.

Ordering Information

Symbol

PART NUMBER

HGT1S7N60A4S9A

HGTG7N60A4

PACKAGE

BRAND

G7N60A4

TO-263AB

TO-247

G7N60A4

HGTP7N60A4

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

COLLECTOR

(FLANGE)

COLLECTOR

(BOTTOM SIDE METAL)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2

12 3 4 5 6 7 8

中文翻译

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与HGTP7N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60A4_NL	ROCHESTER	获取价格	34A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN
HGTP7N60A4_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP7N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP7N60A4-F102	ONSEMI	获取价格	IGBT，600V，SMPS
HGTP7N60B3	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60B3	ROCHESTER	获取价格	14A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP7N60B3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB

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