HGTD7N60C3,
HGTD7N60C3S, HGTP7N60C3
S E M I C O N D U C T O R
14A, 600V, UFS Series N-Channel IGBTs
January 1997
Features
Packaging
JEDEC TO-220AB
o
• 14A, 600V at T = 25 C
C
• 600V Switching SOA Capability
COLLECTOR
GATE
EMITTER
o
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T = 150 C
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• Short Circuit Rating
• Low Conduction Loss
COLLECTOR (FLANGE)
Description
JEDEC TO-251AA
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are
MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
COLLECTOR
GATE
EMITTER
COLLECTOR
(FLANGE)
o
o
between 25 C and 150 C.
JEDEC TO-252AA
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
COLLECTOR
(FLANGE)
GATE
EMITTER
PACKAGING AVAILABILITY
Terminal Diagram
PART NUMBER
HGTD7N60C3
HGTD7N60C3S
HGTP7N60C3
PACKAGE
TO-251AA
BRAND
G7N60C
N-CHANNEL ENHANCEMENT MODE
C
TO-252AA
TO-220AB
G7N60C
G7N60C3
NOTE: When ordering, use the entire part number.
G
Add the suffix 9A to obtain the TO-252AA variant in tape and
reel, i.e. HGTD7N60C3S9A.
Formerly Developmental Type TA49115.
E
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Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTD7N60C3,HGTD7N60C3S
HGTP7N60C3
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
14
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
7
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
56
CM
GES
GEM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
40A at 480V
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o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
0.48
100
W
D
o
o
W/ C
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
ARV
STG
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Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-40 to 150
260
C
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o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
NOTES:
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
1
µs
µs
GE
GE
8
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
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2. V
CE(PK)
= 360V, T = 125 C, R
= 50Ω.
J
GE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
File Number 4141.2
Copyright © Harris Corporation 1997
3-16