Datasheet > HGTP7N60C3S9A

HGTP7N60C3S9A

更新时间： 2024-01-25 09:06:26

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		电动机控制栅瞄准线晶体管
页数	文件大小	规格书
7页	144K
描述
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HGTP7N60C3S9A 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.11
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	14 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	490 ns	标称接通时间 (ton)：	20 ns
Base Number Matches：	1

HGTP7N60C3S9A 数据手册

HGTD7N60C3S, HGTP7N60C3

Data Sheet

January 2000

File Number 4141.3

14A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD7N60C3S and HGTP7N60C3 are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 14A, 600V at T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

Formerly Developmental Type TA49115.

Ordering Information

COLLECTOR (FLANGE)

PART NUMBER

HGTD7N60C3S

HGTP7N60C3

PACKAGE

TO-252AA

TO-220AB

BRAND

G7N60C

G7N60C3

JEDEC TO-252AA

COLLECTOR

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, i.e.

HGTD7N60C3S9A.

GATE

EMITTER

(FLANGE)

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

下载PDF

与HGTP7N60C3S9A相关器件

型号	品牌	获取价格	描述	数据表
HGU065NE4A	CRMICRO	获取价格	TO-251
HGU09N06A	CRMICRO	获取价格	TO-251
HGU09N06A-G	CRMICRO	获取价格	TO-251
HGU10N04A	CRMICRO	获取价格	TO-251
HGV115	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV135	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV155	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV175	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV195	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV2333	HGSEMI	获取价格	双路 350Khz 零漂移CMOS运算放大器

与HGTP7N60C3S9A相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

9
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

9
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

11
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

13

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTP7N60C3S9A

HGTP7N60C3S9A 技术参数

HGTP7N60C3S9A 数据手册

与HGTP7N60C3S9A相关器件

与HGTP7N60C3S9A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTP7N60C3S9A

HGTP7N60C3S9A 技术参数

HGTP7N60C3S9A 数据手册

与HGTP7N60C3S9A相关器件

与HGTP7N60C3S9A相关文章

您还可以找

您在本页遇到什么问题？