Datasheet > HGTP7N60C3DS9A

HGTP7N60C3DS9A

更新时间： 2024-01-07 07:03:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管栅
页数	文件大小	规格书
9页	219K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB

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HGTP7N60C3DS9A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.92
Is Samacsys：	N	最大集电极电流 (IC)：	14 A
集电极-发射极最大电压：	600 V	最大降落时间（tf）：	275 ns
门极发射器阈值电压最大值：	6 V	门极-发射极最大电压：	20 V
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	60 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

HGTP7N60C3DS9A 数据手册

HGTP7N60C3D, HGT1S7N60C3DS

Data Sheet

November 2000

File Number 4150.3

14A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

Features

• 14A, 600V at T = 25 C

The HGTP7N60C3D and HGT1S7N60C3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

25 C and 150 C. The IGBT used is developmental type

TA49115. The diode used in anti-parallel with the IGBT is

developmental type TA49057.

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses

are essential, such as: AC and DC motor controls, power

supplies and drivers for solenoids, relays and contactors.

EMITTER

COLLECTOR

GATE

COLLECTOR (FLANGE)

Formerly Developmental Type TA49121.

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

G7N60C3D

HGTP7N60C3D

JEDEC TO-263AB

HGT1S7N60C3DS

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.

COLLECTOR

(FLANGE)

GATE

Symbol

EMITTER

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7...9

中文翻译

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与HGTP7N60C3DS9A相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60C3S	FAIRCHILD	获取价格	14A, 600V, N-CHANNEL IGBT, TO-252AA
HGTP7N60C3S9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
HGU065NE4A	CRMICRO	获取价格	TO-251
HGU09N06A	CRMICRO	获取价格	TO-251
HGU09N06A-G	CRMICRO	获取价格	TO-251
HGU10N04A	CRMICRO	获取价格	TO-251
HGV115	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV135	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV155	HAMMOND	获取价格	Systeme modulaire a profiles ajoures
HGV175	HAMMOND	获取价格	Systeme modulaire a profiles ajoures

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