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HGTP7N60C3D

更新时间： 2024-01-17 01:50:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
7页 201K
描述
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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中文翻译

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HGTP7N60C3D 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.11
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：14 A集电极-发射极最大电压：600 V
配置：SINGLEJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：490 ns
标称接通时间 (ton)：20 nsBase Number Matches：1

HGTP7N60C3D 数据手册

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HGTP7N60C3D, HGT1S7N60C3D,  
HGT1S7N60C3DS  
S E M I C O N D U C T O R  
14A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diodes  
January 1997  
Features  
Packaging  
JEDEC TO-220AB  
o
• 14A, 600V at T = 25 C  
C
EMITTER  
COLLECTOR  
• 600V Switching SOA Capability  
GATE  
o
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T = 150 C  
J
• Short Circuit Rating  
COLLECTOR (FLANGE)  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
Description  
JEDEC TO-262AA  
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS  
are MOS gated high voltage switching devices combining the  
best features of MOSFETs and bipolar transistors. These  
devices have the high input impedance of a MOSFET and the  
low on-state conduction loss of a bipolar transistor. The much  
lower on-state voltage drop varies only moderately between  
25 C and 150 C. The IGBT used is developmental type  
TA49115. The diode used in anti-parallel with the IGBT is devel-  
opmental type TA49057.  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
o
o
JEDEC TO-263AB  
M
A
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction losses  
are essential, such as: AC and DC motor controls, power sup-  
plies and drivers for solenoids, relays and contactors  
COLLECTOR  
(FLANGE)  
GATE  
EMITTER  
PACKAGING AVAILABILITY  
PART NUMBER  
HGTP7N60C3D  
HGT1S7N60C3D  
HGT1S7N60C3DS  
PACKAGE  
TO-220AB  
BRAND  
G7N60C3D  
G7N60C3D  
G7N60C3D  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
TO-262AA  
TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A to  
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.  
G
Formerly Developmental Type TA49121.  
E
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
HGTP7N60C3D, HGT1S7N60C3D  
HGT1S7N60C3DS  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV  
600  
V
CES  
Collector Current Continuous  
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
14  
7
8
56  
A
A
A
A
V
V
C
C25  
C110  
(AVG)  
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Average Diode Forward Current at 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Switching Safe Operating Area at T = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . SSOA  
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T , T  
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
Short Circuit Withstand Time (Note 2) at V  
Short Circuit Withstand Time (Note 2) at V  
C
o
CM  
GES  
GEM  
±20  
±30  
40A at 480V  
60  
0.487  
-40 to 150  
o
J
o
W
C
D
o
o
W/ C  
C
o
C
J
STG  
o
260  
1
8
C
L
SC  
SC  
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . .t  
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . .t  
µs  
µs  
GE  
GE  
NOTE:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
o
2. V  
CE(PK)  
= 360V, T = 125 C, R  
= 50Ω.  
J
GE  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 4150.1  
Copyright © Harris Corporation 1997  
3-22  
1234567

中文翻译

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HGTP7N60C3D 替代型号

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HGTP7N60C3D_NL FAIRCHILD

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HGTP7N60C3DR RENESAS

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HGTP7N60C3DR FAIRCHILD

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 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
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