Datasheet > HGTP7N60C3D

HGTP7N60C3D

更新时间： 2024-11-08 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	179K
描述
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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HGTP7N60C3D 数据手册

HGTP7N60C3D, HGT1S7N60C3DS

Data Sheet

January 2000

File Number 4150.2

14A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

Features

• 14A, 600V at T = 25 C

The HGTP7N60C3D and HGT1S7N60C3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

25 C and 150 C. The IGBT used is developmental type

TA49115. The diode used in anti-parallel with the IGBT is

developmental type TA49057.

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses

are essential, such as: AC and DC motor controls, power

supplies and drivers for solenoids, relays and contactors.

EMITTER

COLLECTOR

GATE

COLLECTOR (FLANGE)

Formerly Developmental Type TA49121.

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

G7N60C3D

HGTP7N60C3D

JEDEC TO-263AB

HGT1S7N60C3DS

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.

COLLECTOR

(FLANGE)

GATE

Symbol

EMITTER

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

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HGTP7N60C3D 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP7N60C3D相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60C3D_05	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DR	RENESAS	获取价格	14A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3
HGTP7N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGTP7N60C3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGTP7N60C3S	FAIRCHILD	获取价格	14A, 600V, N-CHANNEL IGBT, TO-252AA
HGTP7N60C3S9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
HGU065NE4A	CRMICRO	获取价格	TO-251
HGU09N06A	CRMICRO	获取价格	TO-251

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