Datasheet > HGTP7N60B3

HGTP7N60B3

更新时间： 2024-09-28 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	96K
描述
14A, 600V, UFS Series N-Channel IGBTs

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HGTP7N60B3 数据手册

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Data Sheet

January 2000

File Number 4412.2

14A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3

are MOS gated high voltage switching devices combining the

best features of MOSFETs and bipolar transistors. These

devices have the high input impedance of a MOSFET and the

low on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

• 14A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

25 C and 150 C.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction

losses are essential, such as: AC and DC motor controls,

power supplies and drivers for solenoids, relays and contactors.

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

Formerly Developmental Type TA49190.

Ordering Information

PART NUMBER

HGTD7N60B3S

HGT1S7N60B3S

HGTP7N60B3

PACKAGE

BRAND

G7N60B

TO-252AA

JEDEC TO-263AB

TO-263AB

TO-220AB

G7N60B3

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,

HGTD7N60B3S9A.

Symbol

JEDEC TO-252AA

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGTP7N60B3相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60B3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP7N60C3	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3	HARRIS	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_05	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,

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