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HGTP7N60B3D PDF预览

HGTP7N60B3D

更新时间： 2024-11-08 22:51:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
8页 161K
描述
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

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中文翻译

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HGTP7N60B3D 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.31
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：14 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：175 ns门极发射器阈值电压最大值：6 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：60 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：350 ns标称接通时间 (ton)：46 ns
Base Number Matches：1

HGTP7N60B3D 数据手册

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HGTP7N60B3D, HGT1S7N60B3DS  
Data Sheet  
December 2001  
14A, 600V, UFS Series N-Channel IGBTs  
with Anti-Parallel Hyperfast Diode  
Features  
o
• 14A, 600V, T = 25 C  
C
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated  
high voltage switching devices combining the best features  
of MOSFETs and bipolar transistors. These devices have the  
high input impedance of a MOSFET and the low on-state  
conduction loss of a bipolar transistor. The much lower  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
o
on-state voltage drop varies only moderately between 25 C  
o
and 150 C at rated current. The IGBT is developmental type  
TA49190. The diode used in anti-parallel with the IGBT is the  
RHRD660 (TA49057).  
Packaging  
JEDEC TO-220AB (ALTERNATE VERSION)  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
COLLECTOR  
(FLANGE)  
E
C
G
Formerly Developmental Type TA49191.  
Ordering Information  
PART NUMBER  
PACKAGE  
TO-220AB ALT  
TO-263AB  
BRAND  
G7N60B3D  
G7N60B3D  
JEDEC TO-263AB  
COLLECTOR  
HGTP7N60B3D  
HGT1S7N60B3DS  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, i.e.,  
HGT1S7N60B3DS9A.  
(FLANGE)  
E
Symbol  
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTP7N60B3D, HGT1S7N60B3DS Rev. B  
12345678

中文翻译

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HGTP7N60B3D 替代型号

型号 品牌 替代类型 描述 数据表
STGP8NC60KD STMICROELECTRONICS

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HGTP7N60C3 INTERSIL

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HGTP7N60C3D FAIRCHILD

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 		14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D INTERSIL

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 		14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_05 FAIRCHILD

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 		14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_NL FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DR RENESAS

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 		14A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3
HGTP7N60C3DR FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,

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