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SGP15N120 PDF预览

SGP15N120

更新时间: 2024-09-18 22:21:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
12页 454K
描述
Fast IGBT in NPT-technology

SGP15N120 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:End Of Life零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.15Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):30 A
集电极-发射极最大电压:1200 V配置:SINGLE
最大降落时间(tf):26 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):198 W
认证状态:Not Qualified最大上升时间(tr):24 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):683 ns
标称接通时间 (ton):68 nsBase Number Matches:1

SGP15N120 数据手册

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SGP15N120 SGP15N120  
SGW15N120  
Fast IGBT in NPT-technology  
40% lower Eoff compared to previous generation  
Short circuit withstand time – 10 µs  
Designed for:  
C
E
- Motor controls  
- Inverter  
- SMPS  
G
NPT-Technology offers:  
- very tight parameter distribution  
- high ruggedness, temperature stable behaviour  
- parallel switching capability  
P-TO-220-3-1  
(TO-220AB)  
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1  
(TO-263AB)  
(TO-247AC)  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
Eoff  
Tj  
Package  
Ordering Code  
SGP15N120  
SGB15N120  
SGW15N120  
1200V  
15A  
1.5mJ  
TO-220AB  
Q67040-S4274  
150°C  
TO-263AB(D2PAK) Q67040-S4275  
TO-247AC  
Q67040-S4276  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
VCE  
IC  
1200  
V
A
30  
15  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
ICpul s  
-
52  
52  
Turn off safe operating area  
VCE 1200V, Tj 150°C  
Gate-emitter voltage  
VG E  
EAS  
V
±20  
Avalanche energy, single pulse  
IC = 15A, VCC = 50V, RGE = 25, start at Tj = 25°C  
Short circuit withstand time1)  
VGE = 15V, 100VVCC 1200V, Tj 150°C  
Power dissipation  
85  
mJ  
tSC  
10  
µs  
Pt ot  
198  
W
TC = 25°C  
Operating junction and storage temperature  
Tj , Tstg  
-55...+150  
260  
°C  
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Jul-02  
Power Semiconductors  

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