Datasheet > SGP20N60_09

SGP20N60_09

更新时间： 2024-09-19 09:27:07

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
12页	359K
描述
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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SGP20N60_09 数据手册

SGP20N60

SGW20N60

Fast IGBT in NPT-technology

• 75% lower E_offcompared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-220-3-1

PG-TO-247-3

• Qualified according to JEDEC¹for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

2.4V

T_j

Marking Package

SGP20N60

SGW20N60

600V

20A

G20N60 PG-TO-220-3-1

G20N60 PG-TO-247-3

150°C

2.4V

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

_CE≤ 600V, T_j≤ 150°C

Gate-emitter voltage

V_GE

E_AS

±20

115

Avalanche energy, single pulse

I_C= 20 A, V_CC= 50 V, R_GE= 25 Ω,

start at T_j= 25°C

Short circuit withstand time²

t_SC

µs

_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

P_tot

179

T_C= 25°C

Operating junction and storage temperature

Soldering temperature,

T_j, T_stg

T_s

-55...+150

260

°C

wavesoldering, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 Nov 09

12 3 4 5 6 7...12

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