Datasheet > SGP30N60_08

SGP30N60_08

更新时间： 2024-09-19 06:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
12页	336K
描述
Fast IGBT in NPT-technology

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数据手册

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SGP30N60_08 数据手册

SGP30N60

SGW30N60

Fast IGBT in NPT-technology

• 75% lower E_offcompared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-220-3-1

PG-TO-247-3

• Qualified according to JEDEC¹for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

SGP30N60

SGW30N60

V_CE

I_C

V_CE(sat)

2.5V

T_j

Marking

G30N60

Package

600V

30A

PG-TO-220-3-1

PG-TO-247-3

150°C

2.5V

Maximum Ratings

Parameter

Symbol

Value

Unit

V_CE

I_C

600

Collector-emitter voltage

DC collector current

T_C= 25°C

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

112

V_CE≤ 600V, T_j≤ 150°C

Gate-emitter voltage

V_GE

E_AS

±20

165

Avalanche energy, single pulse

I_C= 30 A, V_CC= 50 V, R_GE= 25 Ω,

start at T_j= 25°C

Short circuit withstand time²

t_SC

µs

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

P_tot

250

T_C= 25°C

Operating junction and storage temperature

Soldering temperature,

T_j, T_stg

T_s

-55...+150

260

°C

wavesoldering, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 Sep. 08

12 3 4 5 6 7...12

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