Datasheet > SGP23N60UF

SGP23N60UF

更新时间： 2024-09-18 22:19:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
7页	534K
描述
Ultra-Fast IGBT

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中文翻译

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SGP23N60UF 数据手册

IGBT

SGP23N60UF

Ultra-Fast IGBT

General Description

Features

Fairchild's UF series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UF series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

•

High speed switching

Low saturation voltage : V

High input impedance

= 2.1 V @ I = 12A

CE(sat)

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-220

G C E

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

SGP23N60UF

Units

Collector-Emitter Voltage

600

CES

GES

Gate-Emitter Voltage

± 20

Collector Current

@ T

25°C

Collector Current

@ T = 100°C

Pulsed Collector Current

CM (1)

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

@ T

25°C

100

°C

@ T = 100°C

-55 to +150

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

°C/W

Thermal Resistance, Junction-to-Case

1.2

θJC

θJA

Thermal Resistance, Junction-to-Ambient

62.5

SGP23N60UF Rev. A1

12 3 4 5 6 7

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与SGP23N60UF相关器件

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SGP23N60UFD	FAIRCHILD	获取价格	Ultra-Fast IGBT
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SGP23N60UFDTU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
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