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SGP23N60UFDTU PDF预览

SGP23N60UFDTU

更新时间: 2024-11-10 21:00:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网电动机控制瞄准线开关晶体管
页数 文件大小 规格书
8页 585K
描述
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

SGP23N60UFDTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING最大集电极电流 (IC):23 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):280 ns门极发射器阈值电压最大值:7.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):320 ns标称接通时间 (ton):55 ns
Base Number Matches:1

SGP23N60UFDTU 数据手册

 浏览型号SGP23N60UFDTU的Datasheet PDF文件第2页浏览型号SGP23N60UFDTU的Datasheet PDF文件第3页浏览型号SGP23N60UFDTU的Datasheet PDF文件第4页浏览型号SGP23N60UFDTU的Datasheet PDF文件第5页浏览型号SGP23N60UFDTU的Datasheet PDF文件第6页浏览型号SGP23N60UFDTU的Datasheet PDF文件第7页 
IGBT  
SGP23N60UFD  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UFD series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UFD series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 12A  
CE(sat)  
C
CO-PAK, IGBT with FRD : t = 42ns (typ.)  
rr  
Applications  
AC & DC motor controls, general purpose inverters, robotics, and servo controls.  
C
E
G
TO-220  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGP23N60UFD  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
23  
A
C
I
C
Collector Current  
@ T = 100°C  
12  
A
C
I
I
I
Pulsed Collector Current  
92  
A
CM (1)  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T = 100°C  
12  
92  
A
F
C
A
FM  
P
@ T  
=
25°C  
100  
W
W
°C  
°C  
D
C
@ T = 100°C  
40  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
(IGBT)  
1.2  
2.5  
θJC  
θJC  
θJA  
(DIODE)  
--  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
©2002 Fairchild Semiconductor Corporation  
SGP23N60UFD Rev. A1  

SGP23N60UFDTU 替代型号

型号 品牌 替代类型 描述 数据表
IRGBC30UD2 INFINEON

类似代替

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V,

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