Datasheet > HGTP7N60C3

HGTP7N60C3

更新时间： 2024-02-07 06:08:48

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	147K
描述
14A, 600V, UFS Series N-Channel IGBTs

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技术参数
数据手册

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HGTP7N60C3 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.11
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	14 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	490 ns
标称接通时间 (ton)：	20 ns	Base Number Matches：	1

HGTP7N60C3 数据手册

HGTD7N60C3S, HGTP7N60C3

Data Sheet

January 2000

File Number 4141.3

14A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD7N60C3S and HGTP7N60C3 are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 14A, 600V at T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

Formerly Developmental Type TA49115.

Ordering Information

COLLECTOR (FLANGE)

PART NUMBER

HGTD7N60C3S

HGTP7N60C3

PACKAGE

TO-252AA

TO-220AB

BRAND

G7N60C

G7N60C3

JEDEC TO-252AA

COLLECTOR

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, i.e.

HGTD7N60C3S9A.

GATE

EMITTER

(FLANGE)

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGTP7N60C3相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60C3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_05	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DR	RENESAS	获取价格	14A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3
HGTP7N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGTP7N60C3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGTP7N60C3S	FAIRCHILD	获取价格	14A, 600V, N-CHANNEL IGBT, TO-252AA
HGTP7N60C3S9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA

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