Datasheet > HGTP7N60B3D

HGTP7N60B3D

更新时间： 2024-11-26 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	97K
描述
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

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HGTP7N60B3D 数据手册

HGTP7N60B3D, HGT1S7N60B3DS

Data Sheet

January 2000

File Number 4413.2

14A, 600V, UFS Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diode

Features

• 14A, 600V, T = 25 C

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

on-state voltage drop varies only moderately between 25 C

and 150 C at rated current. The IGBT is developmental type

TA49190. The diode used in anti-parallel with the IGBT is the

RHRD660 (TA49057).

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

COLLECTOR

(FLANGE)

Formerly Developmental Type TA49191.

Ordering Information

PART NUMBER

PACKAGE

TO-220AB ALT

TO-263AB

BRAND

G7N60B3D

JEDEC TO-263AB

COLLECTOR

HGTP7N60B3D

HGT1S7N60B3DS

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, i.e.,

HGT1S7N60B3DS9A.

(FLANGE)

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGTP7N60B3D相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP7N60C3	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3	HARRIS	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_05	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60C3DR	RENESAS	获取价格	14A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3
HGTP7N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,

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