Datasheet > HGTP7N60A4D

HGTP7N60A4D

更新时间： 2024-11-28 22:23:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管开关双极性晶体管
页数	文件大小	规格书
9页	143K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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技术参数
数据手册
替代型号

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HGTP7N60A4D 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.09
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	34 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	最大降落时间（tf）：	85 ns
门极发射器阈值电压最大值：	7 V	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	125 W	认证状态：	Not Qualified
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子面层：	Matte Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT APPLICABLE
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	205 ns	标称接通时间 (ton)：	17 ns
Base Number Matches：	1

HGTP7N60A4D 数据手册

HGTG7N60A4D, HGTP7N60A4D,

HGT1S7N60A4DS

Data Sheet

December 2001

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• >100kHz Operation At 390V, 7A

• 200kHz Operation At 390V, 5A

The HGTG7N60A4D, HGTP7N60A4D and

HGT1S7N60A4DS are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T = 125 C

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49331. The diode

used in anti-parallel is the development type TA49370.

• Temperature Compensating SABER™ Model

www.fairchildsemi.com

Packaging

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

JEDEC STYLE TO-247

Formerly Developmental Type TA49333.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

HGTG7N60A4D

HGTP7N60A4D

PACKAGE

BRAND

7N60A4D

TO-247

TO-220AB

TO-263AB

7N60A4D

JEDEC TO-220AB

HGT1S7N60A4DS

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in tape and reel, e.g.,

HGT1S7N60A4DS9A.

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B

12 3 4 5 6 7...9

中文翻译

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HGTP7N60A4D 替代型号

型号	品牌	替代类型	描述	数据表
STGP8NC60KD	STMICROELECTRONICS	功能相似	600 V - 8 A - short circuit rugged IGBT

与HGTP7N60A4D相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60A4-F102	ONSEMI	获取价格	IGBT，600V，SMPS
HGTP7N60B3	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60B3	ROCHESTER	获取价格	14A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP7N60B3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP7N60C3	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3	HARRIS	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60C3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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