Datasheet > HGTP7N60A4

HGTP7N60A4

更新时间： 2024-01-06 04:21:06

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关双极性晶体管
页数	文件大小	规格书
8页	199K
描述
600V, SMPS Series N-Channel IGBT

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中文翻译

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数据手册
替代型号

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HGTP7N60A4 数据手册

HGT1S7N60A4S9A, HGTG7N60A4

HGTP7N60A4

Data Sheet

August 2003

600V, SMPS Series N-Channel IGBT

Features

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4

are MOS gated high voltage switching devices combining

the best features of MOSFETs and bipolar transistors. These

devices have the high input impedance of a MOSFET and

the low on-state conduction loss of a bipolar transistor. The

much lower on-state voltage drop varies only moderately

• >100kHz Operation at 390V, 7A

• 200kHz Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at T = 125 C

• Low Conduction Loss

between 25 C and 150 C.

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.

Ordering Information

Symbol

PART NUMBER

HGT1S7N60A4S9A

HGTG7N60A4

PACKAGE

BRAND

7N60A4

TO-263AB

TO-247

7N60A4

HGTP7N60A4

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

COLLECTOR

(FLANGE)

COLLECTOR

(BOTTOM SIDE METAL)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

12 3 4 5 6 7 8

中文翻译

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HGTP7N60A4 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP7N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGTP7N60A4_NL	ROCHESTER	获取价格	34A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN
HGTP7N60A4_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
HGTP7N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP7N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP7N60A4-F102	ONSEMI	获取价格	IGBT，600V，SMPS
HGTP7N60B3	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGTP7N60B3	ROCHESTER	获取价格	14A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP7N60B3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP7N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB

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