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HGTP6N120B3D PDF预览

HGTP6N120B3D

更新时间: 2024-09-17 19:07:03
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网双极性晶体管
页数 文件大小 规格书
1页 22K
描述
1200V, N-CHANNEL IGBT, TO-220AB

HGTP6N120B3D 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.84
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

HGTP6N120B3D 数据手册

  

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